Giant tunneling electroresistance effect driven by an electrically controlled spin valve at a complex oxide interface.

A giant tunneling electroresistance effect driven by electrically controlled spin valve at a complex oxide interface

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface" (2015). Alexei Gruverman Publications. Paper 61. As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between tw...

Optically controlled electroresistance and electrically controlled photovoltage in ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) have recently attracted considerable interest as a promising candidate for applications in the next-generation non-volatile memory technology. In this work, using an ultrathin (3 nm) ferroelectric Sm0.1Bi0.9FeO3 layer as the tunnelling barrier and a semiconducting Nb-doped SrTiO3 single crystal as the bottom electrode, we achieve a tunnelling electroresista...

Enhanced Tunneling Electroresistance in Ferroelectric Tunnel Junctions due to the Reversible Metallization of the Barrier.

Realizing a large tunneling electroresistance (TER) effect is crucial for device application of ferroelectric tunnel junctions (FTJs). FTJs are typically composed of a thin ferroelectric layer sandwiched by two metallic electrodes, where TER generally results from the dependence of the effective tunneling barrier height on the ferroelectric polarization. Since the resistance depends exponential...

Tunneling anisotropic magnetoresistance driven by resonant surface states: First-principles calculations of a Fe(001) surface

Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic electrode. The effect is driven by the spin-orbit coupling. It shifts the resonant surface band via the Rashba effect when the magnetization direction changes....